Gas supply system and sputtering apparatus having same

ABSTRACT

An exemplary gas supply system, includes a plurality of first input lines for supplying gas, a plurality of second input lines, a plurality of third input lines, a first mixing tank communicating with the second input lines, a second mixing tank communicating with the third input lines, and a plurality of three-way valves. Each three-way valve is communicated with a first input line, a second input line and a third input line such that gas in the first input lines can be selectively introduced into the first mixing tank or the second mixing tank.

BACKGROUND

1. Technical Field

The present disclosure relates to sputtering apparatuses, andparticularly, to a gas supply system and a sputtering apparatusincluding the gas supply system.

2. Description of Related Art

Sputtering technology has been widely employed for improving surfaceproperties of workpieces. In a conventional sputtering process, a numberof film layers are formed layer by layer on a workpiece positioned in asputtering chamber. Prior to forming each film layer, different gasesare mixed in a tank for obtaining a mixed reactive gas, and then themixed reactive gas enters the sputtering chamber.

However, two film layers are usually formed in different mixed reactivegas atmosphere occurring within the sputtering chamber. It requiressignificant time to mix the reactive gases before forming an upper filmon a lower film. As a result, the sputtering process is interrupted towait for the reactive gases to mix, which decreases sputteringefficiency. Therefore, a gas supply system and a sputtering apparatushaving the same are desired.

BRIEF DESCRIPTION OF THE DRAWINGS

Many aspects of the present gas supply system and the sputteringapparatus can be better understood with reference to the followingdrawings. The components in the drawings are not necessarily drawn toscale, the emphasis instead being placed upon clearly illustrating theprinciples of the present system and the apparatus. Moreover, in thedrawings, like reference numerals designate corresponding partsthroughout the views.

FIG. 1 is an isometric view of a sputtering apparatus having a gassupply system in accordance with a first embodiment.

FIG. 2 is an isometric view of another sputtering apparatus having a gassupply system in accordance with a second embodiment.

DETAILED DESCRIPTION

Referring to FIG. 1, a sputtering apparatus 100 includes a firstsputtering chamber 10, a second sputtering chamber 20, a conveyor device30, and a gas supply system 40.

The conveyor device 30 is configured for conveying workpieces from thefirst sputtering chamber 10 to the second sputtering chamber 20. A door50 is arranged between the first sputtering chamber 10 and the secondsputtering chamber 20. Thereby, when the door 50 is open, workpieces canbe conveyed from the first sputtering chamber 10 into the secondsputtering chamber 20.

The two sputtering chambers each includes a target 11 positioned on atop wall 13 thereof. Additionally, the two sputtering chambersrespectively define an inert gas inlet 12 in the top wall 13.

The gas supply system 40 includes three first input lines 41, threethree-way valve 54, three second input lines 42, three third input lines43, a first mixing tank 56, a first output line 44, a second mixing tank57 and a second output line 45.

Each first input line 41 includes a reactive gas source 51, a firstvalve 53, a mass flow controller (MFC) 52 arranged therein in thatorder. The reactive gas source 51 is configured for providing reactivegas for sputtering process. In the present embodiment, the threereactive gas sources 51 respectively provide nitrogen gas, acetylenegas, and oxygen gas. Each first input line 41 intersects with acorresponding second input line 42 and a corresponding third input line43 at a corresponding three-way valve 54. That means the second inputlines 42 are in parallel connection with the third input lines 43.

The three second input lines 42 and the first output line 44 communicatewith the first mixing tank 56. The three third input lines 43 and thesecond output line 45 communicate with the second mixing tank 57. Eachsecond input line 42 includes a second valve 55 arranged between thecorresponding three-way valve 54 and the first mixing tank 56. Eachthird input line 43 includes a third valve 60 arranged between thecorresponding three-way valve 54 and the second mixing tank 57. In thismanner, each reactive gas source 51 is capable of alternately supplyingreactive gas into the first mixing tank 10 or the second mixing tank 20.

A fourth valves 59 is respectively arranged in the first output line 44and the second output line 45. The first output line 44 communicateswith the first sputtering chamber 10, while the second output line 45communicates with the second sputtering chamber 20. In addition, a pump58 is employed for pumping mixed gas out of the first mixing tank 56 orthe second mixing tank 57.

In actual use, for instance, in a sputtering process, three differentkinds of reactive gases are first supplied from the three reactive gassources 51, then flow into the first mixing tank 56 under a control of acorresponding MFC 52 and a three-way valve 54. Thereby, a first mixedgas is obtained in the first mixing tank 56. The fourth valve 59 issubsequently opened, the first mixed gas flows into the first sputteringchamber 10. An inert gas is applied into the first sputtering chamber10. Thus, a lower film can be formed on a workpiece in the firstsputtering chamber 10. Meanwhile, the three first input lines 41communicate with the third input lines 43 under a control of the threethree-way valves 54. It is understood that three different kinds ofreactive gases flow into the second mixing tank 57, and a second mixedgas is obtained. When finishing forming the lower film on the workpiece,the workpiece immediately enters into the second sputtering chamber 20.The fourth valve 59 between the second mixing tank 57 and the secondsputtering chamber 20 is opened, and the second mixed gas flows into thesecond sputtering chamber 20. Thereby, an upper film can be formed onthe lower film of the workpiece. Meanwhile, the first input lines 41 arecontrolled to communicate with the second input lines 42, and threedifferent kinds of reactive gases simultaneously flow into the firstmixing tank 56. In this way, the first and second mixing tank 56, 57alternately supply mixed reactive gas. Time for mixing reactive gases issaved and the sputtering apparatus 100 is continuously operated.

If few first mixed gas is retained in the first mixing tank 56 afterforming the lower film on the workpiece, the second valves 55 in thesecond input lines 42 and the third valve 59 in the first output line 44are simultaneously shut off, and the pump 58 pumps the retained firstmixed gas out of the first mixing tank 56. And then, three gas sourcesbegin to supply reactive gases into the first mixing tank 56.

Referring to FIG. 2, another sputtering apparatus 200 provided in asecond embodiment includes a gas supply system 240 and a sputteringchamber 250 including a target 270 positioned on a top wall thereof.

The gas supply system 240 has similar configuration with that of the gassupply system 40, and includes three first input lines 241, threethree-way valves 254, three second input lines 242, a first mixing tank256, three third input lines 243, a second mixing tank 257, a firstoutput line 244 and a second output line 245. A reactive gas source 251,a first valves 253, a MFC 252 are arranged in each of the three firstinput lines 241 in that order.

Additionally, a check valve 260 is arranged between a corresponding MFC252 and a corresponding three-way valve 254. The check valve 260prevents the mixed reactive gas in the first mixing tank 256 or thesecond mixing tank 257 from reflowing into the MFC 252.

Furthermore, a third output line 246 is included. The first output line244 intersects with the second output line 245 at the third output line246. The third output line 246 communicates with the sputtering chamber250.

It is understood that the above-described embodiments are intended toillustrate rather than limit the disclosure. Variations may be made tothe embodiments and methods without departing from the spirit of thedisclosure. Accordingly, it is appropriate that the appended claims beconstrued broadly and in a manner consistent with the scope of thedisclosure.

1. A gas supply system, comprising: a plurality of first input lines forsupplying gas; a plurality of second input lines; a plurality of thirdinput lines; a first mixing tank communicating with the second inputlines; a second mixing tank communicating with the third input lines;and a plurality of three-way valves, each three-way valve communicatingwith a first input line, a second input line and a third input line suchthat gas in the first input lines can be selectively introduced into thefirst mixing tank or the second mixing tank.
 2. The gas supply system ofclaim 1, further comprising a first output line communicating with thefirst mixing tank, and a second output line communicating with thesecond mixing tank.
 3. The gas supply system of claim 1, furthercomprising two pumps respectively communicating with the first mixingtank and the second mixing tank.
 4. The gas supply system of claim 2,further comprising a third output line connected to a joining portionbetween the first output line and the second output line.
 5. The gassupply system of claim 1, wherein each of the first input linescomprising a gas source, a first valve, a mass flow controller arrangedin that order, each mass flow controller communicating with therespective three-way valve.
 6. The gas supply system of claim 5, furthercomprising a plurality of second valves arranged on the respectivesecond input lines and a plurality of third valves arranged on therespective third input lines.
 7. The gas supply system of claim 5,further comprising a plurality of check valves each arranged between themass flow controller and the three-way valve.
 8. A sputtering apparatus,comprising: a plurality of sputtering chambers; a gas supply system forsupplying mixed gas into the sputtering chambers, the gas supply systemcomprising: a plurality of first input lines for supplying gas; aplurality of second input lines; a plurality of third input lines; afirst mixing tank communicating with the second input lines and thesputtering chambers; a second mixing tank communicating with the thirdinput lines and the sputtering chambers; and a plurality of three-wayvalves, each three-way valve communicating with a first input line, asecond input line and a third input line such that gas in the firstinput lines can be alternately introduced into the first mixing tank orthe second mixing tank.
 9. The sputtering apparatus of claim 8, whereinthe gas supply system further comprises a first output linecommunicating with the first mixing tank and the sputtering chambers,and a second output line communicating with the second mixing tank andthe sputtering chambers.
 10. The sputtering apparatus of claim 9,wherein the sputtering chambers includes a first chamber communicatingwith the first output line, a second chamber communicating with thesecond output line and adjoining the first chamber, and a doorpartitioning the first chamber from the second chamber.
 11. Thesputtering apparatus of claim 8, wherein the gas supply system furthercomprises two pumps respectively communicating with the first mixingtank and the second mixing tank.
 12. The sputtering apparatus of claim9, wherein the gas supply system further comprises a third output lineconnected to a joining portion between the first output line and thesecond output line.
 13. The sputtering apparatus of claim 8, whereineach of the first input lines comprises a gas source, a first valve, amass flow controller arranged in that order, each mass flow controllercommunicating with the corresponding three-way valve.
 14. The sputteringapparatus of claim 13, wherein the gas supply system further comprises aplurality of second valves each arranged in a corresponding second inputline and a plurality of third valves each arranged in a correspondingthird input line.
 15. The sputtering apparatus of claim 13, wherein thegas supply system further comprises a plurality of check valves arrangedbetween the respective mass flow controllers and three-way valves. 16.The sputtering apparatus of claim 10, further comprising a conveyordevice extending from the first chamber to the second chamber.